ZARCHI, M.; AHANGARANI, S.; SANJARI, M. Z. Properties of Silicon Dioxide Film Deposited By PECVD at Low Temperature/Pressure. Metallurgical and Materials Engineering, [S. l.], v. 20, n. 2, p. 89–96, 2014. DOI: 10.5937/metmateng1402089M. Disponível em: https://metall-mater-eng.com/index.php/home/article/view/159. Acesso em: 10 feb. 2026.