[1]
Zarchi, M., Ahangarani, S. and Sanjari, M.Z. 2014. Properties of Silicon Dioxide Film Deposited By PECVD at Low Temperature/Pressure. Metallurgical and Materials Engineering. 20, 2 (Jul. 2014), 89–96. DOI:https://doi.org/10.5937/metmateng1402089M.